RESISTIVITY-DOPANT DENSITY RELATIONSHIP FOR PHOSPHORUS-DOPED SILICON

[11] GILLILLAND KE, 1966, METROLOGIA, V2, P95

[12] GROVE AS, 1967, PHYS TECHNOL S, P278

[13] ACTIVATION ANALYSIS OF SILICON BY CONVENTION CARRIER SEPARATIONS AND BY COMPUTER REDUCTION OF GAMMA SPECTRA [J]. ANALYTICAL CHEMISTRY, 1966, 38 (13) : 1853 - &

[14] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[15] LEEDY TF, 1978, NBS40053 SPEC PUBL

[16] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616

[17] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &

[18] PHOTOMETRIC DETERMINATION OF TRACES OF BORON IN SILICON - AFTER SEPARATION BY A HYDROTHERMAL REFINING TECHNIQUE [J]. ANALYTICAL CHEMISTRY, 1958, 30 (08) : 1406 - 1409

[19] A New Method for Calculating Background Dopant Density from p-n Junction Capacitance-Voltage Measurements [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1918 - 1923

[20] MATTIS RL, 1975, NBS40011 SPEC PUBL

[11] GILLILLAND KE, 1966, METROLOGIA, V2, P95

[12] GROVE AS, 1967, PHYS TECHNOL S, P278

[13] ACTIVATION ANALYSIS OF SILICON BY CONVENTION CARRIER SEPARATIONS AND BY COMPUTER REDUCTION OF GAMMA SPECTRA [J]. ANALYTICAL CHEMISTRY, 1966, 38 (13) : 1853 - &

[14] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +

[15] LEEDY TF, 1978, NBS40053 SPEC PUBL

[16] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616

[17] ELECTRON MOBILITIES AND TUNNELING CURRENTS IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 131 - &

[18] PHOTOMETRIC DETERMINATION OF TRACES OF BORON IN SILICON - AFTER SEPARATION BY A HYDROTHERMAL REFINING TECHNIQUE [J]. ANALYTICAL CHEMISTRY, 1958, 30 (08) : 1406 - 1409

[19] A New Method for Calculating Background Dopant Density from p-n Junction Capacitance-Voltage Measurements [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (12) : 1918 - 1923

[20] MATTIS RL, 1975, NBS40011 SPEC PUBL