RESISTIVITY-DOPANT DENSITY RELATIONSHIP FOR PHOSPHORUS-DOPED SILICON

被引：191

作者：

THURBER, WR ^{[1
]}

MATTIS, RL ^{[1
]}

LIU, YM ^{[1
]}

FILLIBEN, JJ ^{[1
]}

机构：

[1] NBS,DIV STAT ENGN,WASHINGTON,DC 20234

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1980年 / 127卷 / 08期

关键词：

D O I：

10.1149/1.2130006

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1807 / 1812

页数：6

相关论文

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