STUDY OF OXYGEN ADDITION TO CF3BR REACTIVE ION ETCHING PLASMAS - EFFECTS ON SILICON SURFACE-CHEMISTRY AND ETCHING BEHAVIOR

被引：4

作者：

BESTWICK, TD ^{[1
]}

OEHRLEIN, GS ^{[1
]}

ANGELL, D ^{[1
]}

JONES, PL ^{[1
]}

CORBETT, JW ^{[1
]}

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 23期

关键词：

D O I：

10.1063/1.101115

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：2321 / 2323

页数：3

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