LASER ANNEALING OF SILICON IMPLANTED WITH BOTH ARGON AND ARSENIC

被引：6

作者：

RIMINI, E

CHU, WK

BAGLIN, JEE

TAN, TY

HODGSON, RT

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 01期

关键词：

D O I：

10.1063/1.91711

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：81 / 83

页数：3

共 9 条

[1] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797

[2]

CHU WK, 1979, ION BEAM MODIFICATIO, P313

[3] COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].

CULLIS, AG ;

SEIDEL, TE ;

MEEK, RL .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198

[4] STRUCTURE OF CRYSTALLIZED LAYERS BY LASER ANNEALING OF (100) AND (111) SELF-IMPLANTED SILICON SAMPLES [J].

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS, 1978, 15 (04) :365-369

[5] EPITAXIAL-GROWTH OF DEPOSITED AMORPHOUS LAYER BY LASER ANNEALING [J].

LAU, SS ;

TSENG, WF ;

NICOLET, MA ;

MAYER, JW ;

ECKARDT, RC ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :130-131

[6]

MATTESON S, COMMUNICATION

[7] EPITAXIAL REGROWTH OF AR-IMPLANTED AMORPHOUS SILICON [J].

REVESZ, P ;

WITTMER, M ;

ROTH, J ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5199-5206

[8]

Tan Tin Wee, COMMUNICATION

[9] LASER ANNEALING OF BORON-IMPLANTED SILICON [J].

YOUNG, RT ;

WHITE, CW ;

CLARK, GJ ;

NARAYAN, J ;

CHRISTIE, WH ;

MURAKAMI, M ;

KING, PW ;

KRAMER, SD .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :139-141

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