SCHOTTKY-BARRIER HEIGHT - DESIGN PARAMETER FOR DEVICE APPLICATIONS

被引：18

作者：

MORGAN, DV

FREY, J

机构：

[1] School of Electrical Engineering, Cornell University, Ithaca

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 10期

关键词：

D O I：

10.1016/0038-1101(79)90054-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A survey is made of the techniques available for varying the effective barrier height of metal semiconductor contacts to materials with high surface state densities, where the true barrier height shows only a minor variation with the metal work function. With the aid of these barrier variation techniques, the barrier height may be used as a design parameter for Schottky diodes. © 1979.

引用

页码：865 / 873

页数：9

共 30 条

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BAIDHAWI KA, J PHYS D

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