INP-ON-INGAAS INTERFACE WITH CA AND IN COVERAGE IN METALORGANIC VAPOR-PHASE EPITAXY OF INCAAS/INP SUPERLATTICES

被引：15

作者：

JIANG, XS ^{[1
]}

CLAWSON, AR ^{[1
]}

YU, PKL ^{[1
]}

机构：

[1] UNIV CALIF SAN DIEGO,DEPT ELECT & COMP ENGN,LA JOLLA,CA 92093

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 147卷 / 1-2期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-0248(94)00621-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

At the InP-on-InGaAs interface grown by metalorganic vapor phase epitaxy (MOVPE), reducing the As memory effect (As carryover) and simultaneously protecting the InGaAs surface against As-P exchange present a challenging problem in achieving a compositional abrupt and high quality interface. In this work, combinations of group III metalorganic sources were introduced at the InP-on-InGaAs interface in the absence of any hydrides. The results prove that severe As carryover exists at this interface. Furthermore, better interface quality is obtained when the InGaAs surface is covered with In rather than with Ga.

引用

页码：8 / 12

页数：5

共 13 条

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