LOW-ENERGY B-CHANNELING IN SI

被引：13

作者：

GARTNER, K

STOCK, D

WENDE, C

NITSCHKE, M

机构：

[1] Friedrich Schiller University Jena, Institute of Solid State Physics, D-07743 Jena

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1994年 / 90卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(94)95526-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The channeling of B ions in [001] Si in the energy range of 0.2 to 5 keV is investigated by computer simulation using binary collision and molecular dynamics computer codes. The B-channeling for energies below 1 keV is proved to be quite different from channeling at higher energies. In contrast to the situation at higher energies the B-profiles hardly depend on the angle of incidence. The reason for this behaviour is discussed by studying typical ion trajectories for different energies.

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页码：124 / 127

页数：4

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