SHALLOW JUNCTION FORMATION BY BORON IMPLANTATION WITH ENERGIES BETWEEN 2 AND 5 KEV AND RAPID THERMAL ANNEALING

被引：8

作者：

KAKOSCHKE, R ^{[1
]}

EHINGER, K ^{[1
]}

机构：

[1] SIEMENS AG,ZTZFEME 41,D-8000 MUNCHEN 38,FED REP GER

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90306-6

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

收藏

页码：823 / 827

页数：5

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