AMORPHIZATION IMPLANTS AND LOW-TEMPERATURE RAPID THERMAL-PROCESSING TO FORM LOW SHEET RESISTANCE, SHALLOW JUNCTION, BORON IMPLANTED LAYERS

被引：11

作者：

WILSON, SR ^{[1
]}

PAULSON, WM ^{[1
]}

GREGORY, RB ^{[1
]}

LAMARTINE, BC ^{[1
]}

LEAVITT, JA ^{[1
]}

MCINTYRE, LC ^{[1
]}

SEERVELD, JL ^{[1
]}

机构：

[1] UNIV ARIZONA,DEPT PHYS,TUCSON,AZ 85721

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 21卷 / 2-4期

关键词：

D O I：

10.1016/0168-583X(87)90873-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：433 / 437

页数：5

共 12 条

[1] PLANAR CHANNELING EFFECTS IN SI(100) [J].

CURRENT, MI ;

TURNER, NL ;

SMITH, TC ;

CRANE, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :336-348

[2]

Fair R. B., 1985, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium, P381

[3] MODELING RAPID THERMAL-DIFFUSION OF ARSENIC AND BORON IN SILICON [J].

FAIR, RB ;

WORTMAN, JJ ;

LIU, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) :2387-2394

[4] RAPID ISOTHERMAL ANNEALING OF BORON ION-IMPLANTED JUNCTIONS [J].

LASKY, JB .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (10) :6009-6018

[5]

Maszara W., 1984, Energy Beam-Solid Interactions and Transient Thermal Processing Symposium, P285

[6] ACTIVATION OF SHALLOW, HIGH-DOSE BF2+ IMPLANTS INTO SILICON BY RAPID THERMAL-PROCESSING [J].

POWELL, RA .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (10) :2837-2843

[7]

Russo C., 1986, Proceedings of the SPIE - The International Society for Optical Engineering, V623, P133, DOI 10.1117/12.961202

[8] GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION [J].

SADANA, DK ;

MASZARA, W ;

WORTMANN, JJ ;

ROZGONYI, GA ;

CHU, WK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (04) :943-945

[9] RAPID THERMAL ANNEALING OF DOPANTS IMPLANTED INTO PREAMORPHIZED SILICON [J].

SEIDEL, TE ;

KNOELL, R ;

POLI, G ;

SCHWARTZ, B ;

STEVIE, FA ;

CHU, P .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :683-687

[10] DUAL ION-IMPLANTATION TECHNIQUE FOR FORMATION OF SHALLOW P+-N JUNCTIONS IN SILICON [J].

TSAUR, BY ;

ANDERSON, CH .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6336-6339

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