BACKGATING STUDIES IN IN0.53GA0.47AS/IN0.52AL0.48AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：4

作者：

HONG, WP ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN, DEPT ELECT ENGN & COMP SCI, SOLID STATE ELECTR LAB, ANN ARBOR, MI 48109 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 01期

关键词：

D O I：

10.1109/16.2409

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：8 / 13

页数：6

共 12 条

[1] BACKGATING IN GAAS/(AL, GA)AS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND ITS REDUCTION WITH A SUPERLATTICE [J].

ARNOLD, D ;

KLEM, J ;

HENDERSON, T ;

MORKOC, H ;

ERICKSON, LP .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :764-766

[2]

BIRRITELLA MS, 1985, IEEE T DEVICES, V29, P1135

[3]

EZIS A, 1985, IEEE ELECTRON DEVICE, V6, P94

[4]

GORONKIN H, 1983, AUG P IEEE C HIGH SP

[5]

HASEGAWA H, 1985, 43RD ANN DEV RES C

[6] ROLES OF SHALLOW AND DEEP ELECTRON TRAPS CAUSING BACKGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS [J].

KHANNA, R ;

DAS, MB .

APPLIED PHYSICS LETTERS, 1986, 48 (14) :937-939

[7] CARRIER INJECTION AND BACKGATING EFFECT IN GAAS-MESFETS [J].

LEE, CP ;

LEE, SJ ;

WELCH, BM .

ELECTRON DEVICE LETTERS, 1982, 3 (04) :97-98

[8] THE ROLES OF THE SURFACE AND BULK OF THE SEMI-INSULATING SUBSTRATE IN LOW-FREQUENCY ANOMALIES OF GAAS INTEGRATED-CIRCUITS [J].

MAKRAMEBEID, S ;

MINONDO, P .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :632-642

[9] CORRELATION BETWEEN THE BACKGATING EFFECT OF A GAAS-MESFET AND THE COMPENSATION MECHANISM OF A SEMI-INSULATING SUBSTRATE [J].

OGAWA, M ;

KAMIYA, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (03) :571-576

[10]

Sheng N. H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P352

← 1 2 →