APPLICATION OF REACTIVE-ION-BEAM ETCHING TO RECESSED-GATE GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：19

作者：

IMAI, Y

OHWADA, K

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 04期

关键词：

D O I：

10.1116/1.583685

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：889 / 893

页数：5

共 17 条

[1] GAAS AND GAALAS EQUI-RATE ETCHING USING A NEW REACTIVE ION-BEAM ETCHING SYSTEM
ASAKAWA, K
SUGATA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L653 - L655
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909
[4] COWLEY AM, 1965, J APPL PHYS, V36, P3231
[5] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET
FUKUI, H
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797
[6] ION-BEAM DAMAGE EFFECTS DURING THE LOW-ENERGY CLEANING OF GAAS
GHANDHI, SK
KWAN, P
BHAT, KN
BORREGO, JM
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (02): : 48 - 50
[7] THERMAL AGING OF AL THIN-FILMS ON GAAS
JOHNSON, NM
MAGEE, TJ
PENG, J
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 838 - 842
[8] ION-BEAM ASSISTED ETCHING FOR GAAS DEVICE APPLICATIONS
LINCOLN, GA
GEIS, MW
MAHONEY, LJ
CHU, A
VOJAK, BA
NICHOLS, KB
PIACENTINI, WJ
EFREMOW, N
LINDLEY, WT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 786 - 789
[9] SURFACE DAMAGE OF REACTIVE ION-BEAM ETCHED GAAS
NAGATA, K
NAKAJIMA, O
ISHIBASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L510 - L512
[10] SUPER LOW-NOISE GAAS-MESFETS WITH A DEEP-RECESS STRUCTURE
OHATA, K
ITOH, H
HASEGAWA, F
FUJIKI, Y
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (06) : 1029 - 1034

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