AVALANCHE BUILDUP TIME OF AN INP/INGAASP/INGAAS APD AT HIGH-GAIN

被引：11

作者：

HSIEH, HC

SARGEANT, W

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1989年 / 25卷 / 09期

关键词：

D O I：

10.1109/3.35229

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2027 / 2035

页数：9

共 25 条

[1] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J].

ANDO, H ;

KANBE, H ;

ITO, M ;

KANEDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) :L277-L280

[2] IMPACT IONIZATION IN (100)-ORIENTED, (110)-ORIENTED, AND (111)-ORIENTED INP AVALANCHE PHOTO-DIODES [J].

ARMIENTO, CA ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :198-200

[3] HIGH-PERFORMANCE AVALANCHE PHOTO-DIODE WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].

CAMPBELL, JC ;

DENTAI, AG ;

HOLDEN, WS ;

KASPER, BL .

ELECTRONICS LETTERS, 1983, 19 (20) :818-820

[4] FREQUENCY-RESPONSE OF INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION GRADING AND MULTIPLICATION REGIONS [J].

CAMPBELL, JC ;

HOLDEN, WS ;

QUA, GJ ;

DENTAI, AG .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (11) :1743-1746

[5] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY [J].

CAPASSO, F ;

ALAVI, K ;

CHO, AY ;

FOY, PW ;

BETHEA, CG .

APPLIED PHYSICS LETTERS, 1983, 43 (11) :1040-1042

[6]

EKHOLM DT, 1988, IEEE T ELECTRON DEV, V35, P2433

[7] GAIN-BANDWIDTH-LIMITED RESPONSE IN LONG-WAVELENGTH AVALANCHE PHOTODIODES [J].

FORREST, SR .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (01) :34-39

[8] OPTICAL-RESPONSE TIME OF IN0.53GA0.47AS/INP AVALANCHE PHOTO-DIODES [J].

FORREST, SR ;

KIM, OK ;

SMITH, RG .

APPLIED PHYSICS LETTERS, 1982, 41 (01) :95-98

[9]

HOLLENHORST JN, 1988, SPIE P, V995

[10] TUNNELING CURRENTS IN IN0.53GA0.47AS HOMOJUNCTION DIODES AND DESIGN OF INGAAS-INP HETERO-STRUCTURE AVALANCHE PHOTO-DIODES [J].

ITO, M ;

KANEDA, T ;

NAKAJIMA, K ;

TOYAMA, Y ;

ANDO, H .

SOLID-STATE ELECTRONICS, 1981, 24 (05) :421-424

← 1 2 3 →