ORGANOMETALLIC VAPOR-PHASE EPITAXIAL-GROWTH STUDIES OF GAP1-XSBX AND INP1-XSBX

被引:22
作者
JOU, MJ
STRINGFELLOW, GB
机构
关键词
D O I
10.1016/0022-0248(89)90305-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
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页码:679 / 689
页数:11
相关论文
共 29 条
[1]  
AMUSYA VM, 1988, SOV PHYS SEMICOND+, V22, P211
[2]  
Barin I., 1973, THERMOCHEMICAL PROPE, V2
[3]  
Barin I., 1973, THERMOCHEMICAL PROPE
[4]   THE PREPARATION OF INAS1-XSBX ALLOYS AND STRAINED-LAYER SUPERLATTICES BY MOCVD [J].
BIEFELD, RM .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :392-399
[5]   GAAS1-XSBX GROWTH BY OMVPE [J].
CHERNG, MJ ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) :799-813
[6]   MOVPE GROWTH OF GAINASSB [J].
CHERNG, MJ ;
JEN, HR ;
LARSEN, CA ;
STRINGFELLOW, GB ;
LUNDT, H ;
TAYLOR, PC .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :408-417
[7]   OMVPE GROWTH OF THE METASTABLE-III/V ALLOY GAAS0.5SB0.5 [J].
CHERNG, MJ ;
CHERNG, YT ;
JEN, HR ;
HARPER, P ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (02) :79-85
[8]   INASSBP-INAS SUPER-LATTICE GROWN BY ORGANOMETALLIC VPE METHOD [J].
FUKUI, T ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) :L551-L554
[9]   ORGANOMETALLIC VPE GROWTH OF INAS1-X-YSBXPY ON INAS [J].
FUKUI, T ;
HORIKOSHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) :587-591
[10]   DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].
HORNSTRA, J ;
BARTELS, WJ .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517