HIGH OPTICAL POWER NONLINEAR DYNAMIC-RESPONSE OF ALINAS/GAINAS MSM PHOTODIODE

被引：8

作者：

ASHOUR, IS ^{[1
]}

HARARI, J ^{[1
]}

VILCOT, JP ^{[1
]}

DECOSTER, D ^{[1
]}

机构：

[1] ECOLE UNIV INGENIEURS LILLE,LILLE,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 05期

关键词：

D O I：

10.1109/16.381976

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we introduce a theoretical study and a numerical simulation of the nonlinear electrical response, including the harmonic-generation rate calculation, of an MSM AlInAs/GaInAs photodiode under high-illumination conditions, We also report that, with an MSM operating at 20 GHz, we can expect a saturation limit at a maximum modulated optical power as high as 100 mW.

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页码：828 / 834

页数：7

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