SMALL-SIGNAL ADMITTANCE STUDY OF GAAS ANODIC MOS SYSTEM

The small signal admittance of the GaAs anodic MOS system is analyzed using the Cole‐Cole plotting technique. Among the various models for the Si MOS system including the single time constant model, the continuum model, the statistical model, and the tunneling model, excellent fit of the measured data can only be obtained with the tunneling model with an exponentially decaying trap distribution. The energy and spatial distribution of traps, and the capture rates are discussed. An anomalously large electron capture cross section is obtained, and it is explained by the interface‐state‐band (ISB) model recently proposed by the authors. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA