IRON-RELATED DEEP STATES IN CHEMICAL VAPOR-DEPOSITED SI

被引：2

作者：

KANIEWSKI, J ^{[1
]}

KANIEWSKA, M ^{[1
]}

JUNG, W ^{[1
]}

PIOTROWSKI, T ^{[1
]}

机构：

[1] CEMI,INST ELECTR TECHNOL,PL-02668 WARSAW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 120卷 / 02期

关键词：

D O I：

10.1002/pssa.2211200226

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Defect impurity levels are studied in silicon p–n junctions, grown by the chemical vapour deposition technique. The measurements are performed by means of deep level transient spectroscopy. It is argued that states at Ev + 0.44 eV, Ev + 0.56 eV, and Ev + 0.66 eV, observed for the first time in CVD‐Si, are Fe‐related. The possible origin of a fourth deep level, with the energy depth equal to 0.3 eV, is also discussed. Direct evidence of an influence of some of the observed deep states on the current‐voltage characteristics of the p‐n junctins studied is also presented. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：531 / 538

页数：8

共 22 条

[1] A STUDY OF IRON-RELATED CENTERS IN HEAVILY BORON-DOPED SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].