A STUDY OF IRON-RELATED CENTERS IN HEAVILY BORON-DOPED SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：16

作者：

AWADELKARIM, OO ^{[1
]}

MONEMAR, B ^{[1
]}

机构：

[1] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 11期

关键词：

D O I：

10.1063/1.342090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6306 / 6310

页数：5

共 20 条

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