PHOTOVOLTAIC INFRARED-SENSORS IN HETEROEPITAXIAL PBTE ON SI

被引：20

作者：

MAISSEN, C

MASEK, J

ZOGG, H

BLUNIER, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1608 / 1610

页数：3

共 17 条

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[2]

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[5]

HOLLOWAY H, 1980, PHYS THIN FILMS, V11, P105

[6] HGCDTE PHOTOVOLTAIC DETECTORS ON SI SUBSTRATES [J].

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BEAN, R ;

ZANIO, K ;

ITO, C ;

MCINTYRE, D .

APPLIED PHYSICS LETTERS, 1987, 51 (26) :2211-2212

[7] PREDICTED PERFORMANCE OF INDIUM-ANTIMONIDE FOCAL PLANE ARRAYS [J].

LOCKWOOD, AH ;

PARRISH, WJ .

OPTICAL ENGINEERING, 1987, 26 (03) :228-231

[8] DETECTIVITY LIMITS FOR PBTE PHOTO-VOLTAIC DETECTORS [J].

ROGALSKI, A .

INFRARED PHYSICS, 1980, 20 (04) :223-229

[9]

ROGALSKI A, 1981, INFRARED PHYS, V24, P191

[10] LIFETIME CALCULATIONS FOR AUGER RECOMBINATION IN LEAD TIN TELLURIDE [J].

ROSMAN, R ;

KATZIR, A .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (05) :814-817

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