PHOTOVOLTAIC INFRARED-SENSORS IN HETEROEPITAXIAL PBTE ON SI

被引：20

作者：

MAISSEN, C

MASEK, J

ZOGG, H

BLUNIER, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 17期

关键词：

D O I：

10.1063/1.99926

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：1608 / 1610

页数：3

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