共 46 条
- [21] MEYER GHJ, 1956, HABLEITERPROBLEME, V3
- [22] CALCULATION OF NONRADIATIVE MULTIPHONON CAPTURE COEFFICIENTS AND IONIZATION RATES FOR NEUTRAL CENTERS ACCORDING TO STATIC COUPLING SCHEME .1. THEORY [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1975, 68 (01): : 69 - 79
- [23] PASSLER R, 1975, CZECH J PHYS, VB 25, P219, DOI 10.1007/BF01589478
- [24] INTERMEDIATE-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 86 (01): : K39 - K44
- [25] SIMPLE APPROXIMATION FOR TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 86 (01): : K45 - K47
- [26] RELATIONSHIPS BETWEEN NONRADIATIVE MULTIPHONON CARRIER-CAPTURE PROPERTIES OF DEEP CHARGED AND NEUTRAL CENTERS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 78 (02): : 625 - 635
- [27] CALCULATION OF NONRADIATIVE MULTIPHONON CAPTURE COEFFICIENTS AND IONIZATION RATES FOR NEUTRAL CENTERS ACCORDING TO STATIC COUPLING SCHEME .2. ALTERNATIVE TRAP MODELS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1976, 76 (02): : 647 - 659
- [28] TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER CAPTURE AND EJECTION PROPERTIES OF DEEP TRAPS IN SEMICONDUCTORS .1. THEORETICAL RESULTS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1978, 85 (01): : 203 - 215
- [29] LOW-TEMPERATURE DEPENDENCES OF NONRADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1977, 83 (02): : K111 - K114
- [30] HIGH-TEMPERATURE LIMIT OF NON-RADIATIVE MULTIPHONON CARRIER-CAPTURE CROSS-SECTIONS OF DEEP TRAPS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1977, 83 (01): : K55 - K58