EFFECT OF SPUTTER VOLTAGE ON THE ELECTRICAL CHARACTERISTICS OF ARGON ION SPUTTERED N-TYPE GAAS

被引：9

作者：

AURET, FD

MYBURG, G

GOODMAN, SA

BREDELL, LJ

BARNARD, WO

机构：

[1] Physics Department, University of Pretoria, Pretoria

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1992年 / 67卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(92)95842-F

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Epitaxially grown n-type GaAs was sputtered by bombarding it with Ar ions at voltages between 0.5 and 5 kV at a dose of 10(13) ions/cm2. The electrical characteristics of the sputtered GaAs were investigated by studying the sputter induced defects using deep level transient spectroscopy (DLTS). The effect of these defects on the electrical characteristics of gold (Au) Schottky barrier diodes (SBDs) was studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements. It was found that the barrier height of the SBDs changed nonmonotonically with sputter voltage, and this could be correlated with the combined effect of sputter induced defects with discrete and continuous energy levels in the GaAs band gap.

引用

页码：410 / 414

页数：5

共 15 条

[1] SINGLE SCAN DEFECT IDENTIFICATION BY DEEP LEVEL TRANSIENT SPECTROSCOPY USING A 2-PHASE LOCK-IN AMPLIFIER (IQ-DLTS) [J].