学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
SUBMICROMETER POLYSILICON GATE CMOS-SOS TECHNOLOGY
被引:7
作者
:
IPRI, AC
论文数:
0
引用数:
0
h-index:
0
IPRI, AC
SOKOLOSKI, JC
论文数:
0
引用数:
0
h-index:
0
SOKOLOSKI, JC
FLATLEY, DW
论文数:
0
引用数:
0
h-index:
0
FLATLEY, DW
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1980年
/ 27卷
/ 07期
关键词
:
D O I
:
10.1109/T-ED.1980.20020
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1275 / 1279
页数:5
相关论文
共 9 条
[1]
COE DJ, 1978, SOLID STATE ELECTRON, V20, P985
[2]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[3]
Elliott M. T., 1977, 1977 International Electron Devices Meeting, p11A
[4]
FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY
HOENEISEN, B
论文数:
0
引用数:
0
h-index:
0
HOENEISEN, B
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(07)
: 819
-
+
[5]
IPRI AC, 1977, RCA REV, V38, P323
[6]
FABRICATION OF SUBMICRON POLYSILICON LINES BY CONVENTIONAL TECHNIQUES
NICHOLAS, KH
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
NICHOLAS, KH
BROCKMAN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
BROCKMAN, HE
STEMP, IJ
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
STEMP, IJ
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(07)
: 398
-
399
[7]
VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC
RODGERS, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
RODGERS, TJ
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 239
-
250
[8]
ROSS EC, 1969, RCA REV, V30, P366
[9]
D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS
SIGG, HJ
论文数:
0
引用数:
0
h-index:
0
SIGG, HJ
VENDELIN, GD
论文数:
0
引用数:
0
h-index:
0
VENDELIN, GD
CAUGE, TP
论文数:
0
引用数:
0
h-index:
0
CAUGE, TP
KOCSIS, J
论文数:
0
引用数:
0
h-index:
0
KOCSIS, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(01)
: 45
-
&
←
1
→
共 9 条
[1]
COE DJ, 1978, SOLID STATE ELECTRON, V20, P985
[2]
DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS
DENNARD, RH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
DENNARD, RH
GAENSSLEN, FH
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
GAENSSLEN, FH
YU, HN
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
YU, HN
RIDEOUT, VL
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
RIDEOUT, VL
BASSOUS, E
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
BASSOUS, E
LEBLANC, AR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
IBM CORP, TJ WATSON RES CTR, YORKTOWN HTS, NY 10598 USA
LEBLANC, AR
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 256
-
268
[3]
Elliott M. T., 1977, 1977 International Electron Devices Meeting, p11A
[4]
FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY
HOENEISEN, B
论文数:
0
引用数:
0
h-index:
0
HOENEISEN, B
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(07)
: 819
-
+
[5]
IPRI AC, 1977, RCA REV, V38, P323
[6]
FABRICATION OF SUBMICRON POLYSILICON LINES BY CONVENTIONAL TECHNIQUES
NICHOLAS, KH
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
NICHOLAS, KH
BROCKMAN, HE
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
BROCKMAN, HE
STEMP, IJ
论文数:
0
引用数:
0
h-index:
0
机构:
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
MULLARD RES LABS,REDHILL,SURREY,ENGLAND
STEMP, IJ
[J].
APPLIED PHYSICS LETTERS,
1975,
26
(07)
: 398
-
399
[7]
VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC
RODGERS, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
RODGERS, TJ
MEINDL, JD
论文数:
0
引用数:
0
h-index:
0
机构:
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305
MEINDL, JD
[J].
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(05)
: 239
-
250
[8]
ROSS EC, 1969, RCA REV, V30, P366
[9]
D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS
SIGG, HJ
论文数:
0
引用数:
0
h-index:
0
SIGG, HJ
VENDELIN, GD
论文数:
0
引用数:
0
h-index:
0
VENDELIN, GD
CAUGE, TP
论文数:
0
引用数:
0
h-index:
0
CAUGE, TP
KOCSIS, J
论文数:
0
引用数:
0
h-index:
0
KOCSIS, J
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(01)
: 45
-
&
←
1
→