SUBMICROMETER POLYSILICON GATE CMOS-SOS TECHNOLOGY

[1] COE DJ, 1978, SOLID STATE ELECTRON, V20, P985

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] Elliott M. T., 1977, 1977 International Electron Devices Meeting, p11A

[4] FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 819 - +

[5] IPRI AC, 1977, RCA REV, V38, P323

[6] FABRICATION OF SUBMICRON POLYSILICON LINES BY CONVENTIONAL TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 398 - 399

[7] VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 239 - 250

[8] ROSS EC, 1969, RCA REV, V30, P366

[9] D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 45 - &

[1] COE DJ, 1978, SOLID STATE ELECTRON, V20, P985

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 256 - 268

[3] Elliott M. T., 1977, 1977 International Electron Devices Meeting, p11A

[4] FUNDAMENTAL LIMITATIONS IN MICROELECTRONICS .1. MOS TECHNOLOGY [J]. SOLID-STATE ELECTRONICS, 1972, 15 (07) : 819 - +

[5] IPRI AC, 1977, RCA REV, V38, P323

[6] FABRICATION OF SUBMICRON POLYSILICON LINES BY CONVENTIONAL TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1975, 26 (07) : 398 - 399

[7] VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 239 - 250

[8] ROSS EC, 1969, RCA REV, V30, P366

[9] D-MOS TRANSISTOR FOR MICROWAVE APPLICATIONS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (01) : 45 - &