INVESTIGATION OF MINORITY-CARRIER DIFFUSION LENGTHS BY ELECTRON-BOMBARDMENT OF SCHOTTKY BARRIERS

被引:305
作者
WU, CJ [1 ]
WITTRY, DB [1 ]
机构
[1] UNIV SO CALIF,DEPT ELECT ENGN,LOS ANGELES,CA 90007
关键词
D O I
10.1063/1.325163
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2827 / 2836
页数:10
相关论文
共 43 条
[21]  
KUSTOV VG, 1970, SOV PHYS SEMICOND+, V3, P1457
[22]  
KYSER DF, 1972, 6TH P INT C XRAY OPT, P147
[23]  
KYSER DF, 1968, THESIS U SO CALIFORN, P7
[24]   EFFECT OF SPOT SIZE ON DETERMINATION OF DIFFUSION LENGTH OF MINORITY-CARRIERS IN P-N-JUNCTIONS USING SCANNED LIGHT-BEAM OR ELECTRON-BEAM TECHNIQUES [J].
LENGYEL, G .
SOLID-STATE ELECTRONICS, 1974, 17 (05) :510-512
[25]   COMPARATIVE IONIZATION ENERGIES FOR PROTONS, DEUTERONS AND ALPHA-PARTICLES IN HIGH-PURITY GERMANIUM AND SI(LI) NUCLEAR RADIATION DETECTORS [J].
MARTINI, M ;
RAUDORF, TW ;
STOTT, WR ;
WADDINGTON, JC .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, NS22 (01) :145-148
[26]   ALUMINUM-SILICON SCHOTTKY BARRIERS AS SEMICONDUCTOR TARGETS FOR EBS DEVICES [J].
NAMORDI, MR ;
THOMPSON, HW .
SOLID-STATE ELECTRONICS, 1975, 18 (06) :499-&
[27]   DIFFUSION LENGTHS IN EPITAXIAL GAAS BY ANGLE LAPPED JUNCTION METHOD [J].
NORWOOD, MH ;
HUTCHINSON, WG .
SOLID-STATE ELECTRONICS, 1965, 8 (10) :807-+
[28]   ACCURATE DETERMINATION OF IONIZATION ENERGY IN SEMICONDUCTOR DETECTORS [J].
PEHL, RH ;
GOULDING, FS ;
LANDIS, DA ;
LENZLING.M .
NUCLEAR INSTRUMENTS & METHODS, 1968, 59 (01) :45-&
[29]  
PFISTER H, 1957, Z NATURFORSCH PT A, V12, P217