CHARACTERIZATION OF P-N-JUNCTIONS UNDER INFLUENCE OF A TIME-VARYING MECHANICAL STRAIN

被引:7
作者
MONTEITH, LK
WORTMAN, JJ
机构
[1] N CAROLINA STATE UNIV,RALEIGH,NC 27607
[2] RES TRIANGLE INST,RESEARCH TRIANGLE PK,NC 27709
关键词
D O I
10.1016/0038-1101(73)90033-6
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:229 / &
相关论文
共 17 条
[1]   PIEZORESISTANCE AND PIEZO-HALL-EFFECT IN N-TYPE SILICON [J].
AUBREY, JE ;
GUBLER, W ;
HENNINGSEN, T ;
KOENIG, SH .
PHYSICAL REVIEW, 1963, 130 (05) :1667-+
[2]  
BISHOP RED, 1960, MECHANICS VIBRATION
[3]  
EDWARDS R, 1964, IEEE T ELECTRON DEVI, VED11, P286
[4]   SOME EFFECTS OF MECHANICAL STRESS ON BREAKDOWN VOLTAGE OF P-N JUNCTIONS [J].
HAUSER, JR ;
WORTMAN, JJ .
JOURNAL OF APPLIED PHYSICS, 1966, 37 (10) :3884-&
[5]   CYCLOTRON RESONANCE EXPERIMENTS IN UNIAXIALLY STRESSED SILICON - VALENCE BAND INVERSE MASS PARAMETERS AND DEFORMATION POTENTIALS [J].
HENSEL, JC ;
FEHER, G .
PHYSICAL REVIEW, 1963, 129 (03) :1041-&
[6]   TRANSPORT AND DEFORMATION-POTENTIAL THEORY FOR MANY-VALLEY SEMICONDUCTORS WITH ANISOTROPIC SCATTERING [J].
HERRING, C ;
VOGT, E .
PHYSICAL REVIEW, 1956, 101 (03) :944-961
[7]   EFFECT OF UNIAXIAL STRESS ON GERMANIUM P-N JUNCTIONS .2. [J].
IMAI, T ;
UCHIDA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (06) :409-&
[8]   MINORITY CARRIER LIFETIME IN UNIAXIALLY STRESSED GERMANIUM [J].
MATUKURA, Y ;
MIURA, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1965, 4 (01) :72-&
[9]  
PAUL W, 1963, SOLIDS PRESSURE, P226
[10]  
PRESCOTT J, 1961, APPLIED ELECTRICITY