THERMALLY STIMULATED LUMINESCENCE OF THERMALLY GROWN SIO2-FILMS

被引：10

作者：

MARTINI, M ^{[1
]}

SPINOLO, G ^{[1
]}

VEDDA, A ^{[1
]}

机构：

[1] CNR, NAZL STRUTTURA MAT GRP, I-20133 MILAN, ITALY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1987年 / 105卷 / 1-2期

关键词：

D O I：

10.1080/00337578708210066

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

引用

页码：107 / 116

页数：10

共 20 条

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[3]

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[8] POINT-DEFECTS IN CRYSTALLINE SIO2 - THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE [J].

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[9] CORRELATIONS OF 4.77-4.28-EV LUMINESCENCE BAND IN SILICON DIOXIDE WITH OXYGEN VACANCY [J].

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[10] EFFICIENCY OF VARIOUS IONIZING PARTICLES (BETA,P,D,ALPHA) IN CAUSING THE PRE-DOSE EFFECT IN SIO2 [J].

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VEDDA, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2) :107-114

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