PHOTOELECTRONIC EFFECTS IN AMORPHOUS-SILICON BASED ALLOYS

[1] STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 371 - 374

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[3] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[4] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 572 - 573

[5] INVESTIGATION OF PHOTOINDUCED EFFECTS IN RF-SPUTTERED A-SI [J]. THIN SOLID FILMS, 1981, 76 (02) : 195 - 200

[6] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[7] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 705 - 706

[9] RHODERICK EH, 1979, METAL SEMICONDUCTOR, P8

[10] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246

[1] STUDY OF LIGHT-INDUCED-CHANGES IN A-SI-H BY DETAILED COMPUTER MODELING OF ADMITTANCE AND DLTS [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 371 - 374

[2] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1981, 38 (06) : 456 - 458

[3] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[4] FIELD-EFFECT MEASUREMENT ON THE FILM-SUBSTRATE AND FILM-VACUUM INTERFACES OF A-SI-H [J]. APPLIED PHYSICS LETTERS, 1980, 37 (06) : 572 - 573

[5] INVESTIGATION OF PHOTOINDUCED EFFECTS IN RF-SPUTTERED A-SI [J]. THIN SOLID FILMS, 1981, 76 (02) : 195 - 200

[6] LIGHT-INDUCED EFFECTS IN SCHOTTKY DIODES ON HYDROGENATED AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (02) : 208 - 211

[7] Le Comber P. G., 1972, Journal of Non-Crystalline Solids, V11, P219, DOI 10.1016/0022-3093(72)90004-X

[8] LIGHT-INDUCED RADIATIVE RECOMBINATION CENTERS IN HYDROGENATED AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1980, 37 (08) : 705 - 706

[9] RHODERICK EH, 1979, METAL SEMICONDUCTOR, P8

[10] INFLUENCE OF INTERFACE CHARGES ON TRANSPORT MEASUREMENTS IN AMORPHOUS SILICON FILMS [J]. JOURNAL DE PHYSIQUE, 1978, 39 (11): : 1241 - 1246