INSULATOR CHARGE AND VFB STABILITY OF SNOS CAPACITORS

被引：6

作者：

BARILE, CA ^{[1
]}

DOCKERTY, RC ^{[1
]}

NAGARAJA.A ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL FACIL,HOPEWELL JUNCTION,NY 12533

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 07期

关键词：

D O I：

10.1149/1.2401951

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：907 / 911

页数：5

相关论文

共 12 条

[1] ELECTRICAL PROPERTIES OF VAPOR-DEPOSITED SILICON NITRIDE AND SILICON OXIDE FILMS ON SILICON
DEAL, BE
FLEMING, PJ
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : 300 - &
[2] CHARACTERISTICS OF FAST SURFACE STATES ASSOCIATED WITH SIO2-SI AND SI3N4-SIO2-SI STRUCTURES
DEAL, BE
MACKENNA, EL
CASTRO, PL
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (07) : 997 - &
[3] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON
DEAL, BE
SKLAR, M
GROVE, AS
SNOW, EH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +
[4] PROPERTY CHANGES IN PYROLYTIC SILICON NITRIDE WITH REACTANT COMPOSITION CHANGES
DOO, VY
KERR, DR
NICHOLS, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (01) : 61 - &
[5] CHARGE TRANSPORT AND STORAGE IN METAL-NITRIDE-OXIDE-SILICON (MNOS) STRUCTURES
FROHMANB.D
LENZLINGER, M
[J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3307 - +
[6] FUJIMOTO S, 1971, ELECTROCHEM SOC M WA
[7] SILICON-SILICON DIOXIDE SYSTEM
GRAY, PV
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +
[8] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GROVE, AS
DEAL, BE
SNOW, EH
SAH, CT
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 145 - +
[9] KERR D, 1969, P INT C PROP USE MIS
[10] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS
KUHN, M
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (06) : 873 - +