A MODIFICATION TO THE FOWLER-NORDHEIM TUNNELING CURRENT CALCULATION FOR THIN MOS STRUCTURES

被引：21

作者：

OH, SJ

YEOW, YT

机构：

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 06期

关键词：

D O I：

10.1016/0038-1101(88)90414-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1113 / 1118

页数：6

共 9 条

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