STUDIES OF DEFECTS IN NEUTRON-IRRADIATED P-TYPE SILICON BY ADMITTANCE MEASUREMENTS OF N+-P DIODES

被引：10

作者：

TOKUDA, Y ^{[1
]}

USAMI, A ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL,DEPT ELECTR,SHOWA KU,NAGOYA,AICHI 466,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1978年 / 49卷 / 02期

关键词：

D O I：

10.1063/1.324607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：603 / 607

页数：5

共 23 条

[1] CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].

CHENG, LJ ;

LORI, J .

PHYSICAL REVIEW, 1968, 171 (03) :856-+

[2] APPLICATION OF DISTRIBUTED EQUILIBRIUM EQUIVALENT CIRCUIT MODEL TO SEMICONDUCTOR JUNCTIONS [J].

FORBES, L ;

SAH, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) :1036-+

[3] DISORDERED REGIONS IN SEMICONDUCTORS BOMBARDED BY FAST NEUTRONS [J].

GOSSICK, BR .

JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1214-1218

[4] MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON [J].

GREGORY, BL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :53-+

[5] NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J].

GREGORY, BL ;

NAIK, SS ;

OLDHAM, WG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :50-+

[6] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].

KALMA, AH ;

CORELLI, JC .

PHYSICAL REVIEW, 1968, 173 (03) :734-+

[7] ADMITTANCE SPECTROSCOPY OF IMPURITY LEVELS IN SCHOTTKY BARRIERS [J].

LOSEE, DL .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (05) :2204-2214

[8] ADMITTANCE SPECTROSCOPY OF DEEP IMPURITY LEVELS - ZNTE SCHOTTKY BARRIERS [J].

LOSEE, DL .

APPLIED PHYSICS LETTERS, 1972, 21 (02) :54-&

[9]

NAIK SS, 1971, THESIS U CALIFORNIA

[10] EFFECTS OF NEUTRON IRRADIATION IN P-TYPE SILICON [J].

NAKASHIMA, K ;

INUISHI, Y .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (02) :397-+

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