DEFECT PRODUCTION DURING THE FABRICATION OF SOI BY OXYGEN ION-IMPLANTATION

被引：2

作者：

BARKLIE, RC ^{[1
]}

ENNIS, TJ ^{[1
]}

REESON, K ^{[1
]}

HEMMENT, PLF ^{[1
]}

机构：

[1] UNIV SURREY,DEPT ELECTR & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND

来源：

APPLIED SURFACE SCIENCE | 1989年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(89)90935-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：400 / 407

页数：8

共 23 条

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[8]

ENNIS TJ, 1988, IN PRESS 1987 P C PH

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[10] IRREVERSIBLE AND REVERSIBLE ANNEALING OF PARAMAGNETIC OXYGEN VACANCIES (E'1 CENTERS) IN OXYGEN-IMPLANTED AMORPHOUS SIO2 [J].

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