DIODE-LASER DEGRADATION MECHANISMS - A REVIEW

被引:63
作者
WATERS, RG [1 ]
机构
[1] MCDONNELL DOUGLAS ELECTR SYST CO,CTR OPTOELECTR,ELMSFORD,NY 10523
关键词
D O I
10.1016/0079-6727(91)90004-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
[No abstract available]
引用
收藏
页码:153 / 174
页数:22
相关论文
共 74 条
[1]   HIGH-RELIABILITY SILICON MICROCHANNEL SUBMOUNT FOR HIGH AVERAGE POWER LASER DIODE-ARRAYS [J].
BEACH, R ;
MUNDINGER, D ;
BENETT, W ;
SPERRY, V ;
COMASKEY, B ;
SOLARZ, R .
APPLIED PHYSICS LETTERS, 1990, 56 (21) :2065-2067
[2]   CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS [J].
BEERNINK, KJ ;
YORK, PK ;
COLEMAN, JJ ;
WATERS, RG ;
KIM, J ;
WAYMAN, CM .
APPLIED PHYSICS LETTERS, 1989, 55 (21) :2167-2169
[3]   RECTANGULAR AND L-SHAPED GAAS/ALGAAS LASERS WITH VERY HIGH-QUALITY ETCHED FACETS [J].
BEHFARRAD, A ;
WONG, SS ;
BALLANTYNE, JM ;
SOLTZ, BA ;
HARDING, CM .
APPLIED PHYSICS LETTERS, 1989, 54 (06) :493-495
[4]   LOW DEGRADATION RATE IN STRAINED INGAAS/ALGAAS SINGLE QUANTUM-WELL LASERS [J].
BOUR, DP ;
GILBERT, DB ;
FABIAN, KB ;
BEDNARZ, JP ;
ETTENBERG, M .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (03) :173-174
[5]   MAPPING OF LOCAL TEMPERATURES ON MIRRORS OF GAAS/ALGAAS LASER-DIODES [J].
BRUGGER, H ;
EPPERLEIN, PW .
APPLIED PHYSICS LETTERS, 1990, 56 (11) :1049-1051
[6]   SIDEWALL DAMAGE IN N+-GAAS QUANTUM WIRES FROM REACTIVE ION ETCHING [J].
CHEUNG, R ;
LEE, YH ;
KNOEDLER, CM ;
LEE, KY ;
SMITH, TP ;
KERN, DP .
APPLIED PHYSICS LETTERS, 1989, 54 (21) :2130-2132
[7]   CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAAS, TI, AND MO [J].
CHINN, JD ;
FERNANDEZ, A ;
ADESIDA, I ;
WOLF, ED .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :701-704
[8]  
DOBSON PS, 1977, I PHYS C SER A, V33, P419
[9]   MONOLITHIC TWO-DIMENSIONAL SURFACE-EMITTING ARRAYS OF GAAS/ALGAAS DIODE-LASERS [J].
DONNELLY, JP ;
GOODHUE, WD ;
WINDHORN, TH ;
BAILEY, RJ ;
LAMBERT, SA .
APPLIED PHYSICS LETTERS, 1987, 51 (15) :1138-1140
[10]   RAPID DEGRADATION OF INGAASP/INP DOUBLE HETEROSTRUCTURE LASERS DUE TO 110 DARK LINE DEFECT FORMATION [J].
ENDO, K ;
MATSUMOTO, S ;
KAWANO, H ;
SAKUMA, I ;
KAMEJIMA, T .
APPLIED PHYSICS LETTERS, 1982, 40 (11) :921-923