DIODE-LASER DEGRADATION MECHANISMS - A REVIEW

被引：63

作者：

WATERS, RG ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS ELECTR SYST CO,CTR OPTOELECTR,ELMSFORD,NY 10523

来源：

PROGRESS IN QUANTUM ELECTRONICS | 1991年 / 15卷 / 03期

关键词：

D O I：

10.1016/0079-6727(91)90004-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

[No abstract available]

引用

页码：153 / 174

页数：22

共 74 条

[61] DEEP-LEVEL CHANGES IN (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS DEGRADED DURING ACCELERATED AGING AT HIGH-TEMPERATURES [J].

UJI, T ;

SUZUKI, T ;

KAMEJIMA, T .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :655-657

[62] GAALAS WINDOW LASERS EMITTING 500 MW CW IN FUNDAMENTAL MODE [J].

UNGAR, J ;

BARCHAIM, N ;

MAZED, M ;

MITTELSTEIN, M ;

OH, S ;

URY, I .

ELECTRONICS LETTERS, 1990, 26 (18) :1441-1442

[63] OPERATING CHARACTERISTICS OF SINGLE-QUANTUM-WELL ALGAAS/GAAS HIGH-POWER LASERS [J].

WAGNER, DK ;

WATERS, RG ;

TIHANYI, PL ;

HILL, DS ;

ROZA, AJ ;

VOLLMER, HJ ;

LEOPOLD, MM .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (07) :1258-1265

[64] STRAIN-ENHANCED LUMINESCENCE DEGRADATION IN GAAS-GAAIAS DOUBLE-HETEROSTRUCTURE LASERS REVEALED BY PHOTO-LUMINESCENCE [J].

WAKEFIELD, B .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :7914-7916

[65] DEGRADATION PHENOMENOLOGY IN (AL)GAAS QUANTUM WELL LASERS [J].

WATERS, RG ;

BERTASKA, RK .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :179-181

[66] INHIBITED DARK-LINE DEFECT FORMATION IN STRAINED INGAAS/ALGAAS QUANTUM-WELL LASERS [J].

WATERS, RG ;

BOUR, DP ;

YELLEN, SL ;

RUGGIERI, NF .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1990, 2 (08) :531-533

[67] DARK-LINE OBSERVATIONS IN FAILED QUANTUM WELL LASERS [J].

WATERS, RG ;

BERTASKA, RK .

APPLIED PHYSICS LETTERS, 1988, 52 (16) :1347-1348

[68] QUANTUM-WELL LASERS IN OPERATION FOR 4 YEARS [J].

WATERS, RG ;

YELLEN, SL .

APPLIED PHYSICS LETTERS, 1990, 57 (25) :2644-2645

[69] VIABLE STRAINED-LAYER LASER AT LAMBDA=1100 NM [J].

WATERS, RG ;

YORK, PK ;

BEERNINK, KJ ;

COLEMAN, JJ .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (02) :1132-1134

[70] DARK-LINE-RESISTANT DIODE-LASER AT 0.8 -MU-M COMPRISING INALGAAS STRAINED QUANTUM-WELL [J].

WATERS, RG ;

DALBY, RJ ;

BAUMANN, JA ;

DESANCTIS, JL ;

SHEPARD, AH .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (05) :409-411

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