THERMALIZATION OF PHOTOEXCITED CARRIERS IN BULK AND QUANTUM WIRE SEMICONDUCTORS

被引:4
作者
LUGLI, P [1 ]
ROTA, L [1 ]
ROSSI, F [1 ]
机构
[1] UNIV MODENA,DIPARTIMENTO FIS,I-41100 MODENA,ITALY
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1992年 / 173卷 / 01期
关键词
D O I
10.1002/pssb.2221730123
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
A theoretical study of the internal thermalization of high-energy carriers created by laser excitation in bulk and quantum wire semiconductors is presented. For the bulk case the results of our Monte Carlo simulation are compared to luminescence up-conversion experiments used to monitor the spectral and temporal evolution of the photoexcited carrier distributions with a time resolution of about 100 fs. The agreement between theory and experiment is verv good and shows that the Coulomb interaction among carriers is responsible for the initial ultrafast thermalization. On the contrary, a much slower thermalization is found theoretically in quantum wires, which can be mainly attributed to the reduced efficiency of intersubband processes and to the reduced effect of electron-electron intrasubband scattering. Available experiments seem to confirm such findings.
引用
收藏
页码:229 / 240
页数:12
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