PICOSECOND PHOTOCONDUCTIVE RESPONSE OF POLYCRYSTALLINE SILICON THIN-FILMS

被引：10

作者：

SHU, C ^{[1
]}

HU, BB ^{[1
]}

ZHANG, XC ^{[1
]}

MEI, P ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] COLUMBIA UNIV,CTR TELECOMMUN RES,NEW YORK,NY 10027

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 01期

关键词：

D O I：

10.1063/1.103579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using autocorrelation measurement, we have studied the picosecond photoconductivity of as-deposited, fine-grain polycrystalline silicon thin films. A strong correlation between photoconductive decay time and polycrystalline silicon deposition temperature has been observed. The fastest autocorrelated photoconductive response is 9 ps full width at half maximum, and is obtained from a polycrystalline silicon sample deposited at 590 °C. We estimated the carrier mobility from the peak autocorrelated current, as well as from the average photocurrent of a single gap. These two values show a large difference for samples deposited at relatively high temperatures, which can be explained by imperfect metal-semiconductor ohmic contacts.

引用

页码：64 / 66

页数：3

共 11 条

[1]

AUSTON DH, 1982, LASER FOCUS WORLD, V18, P89

[2] PICOSECOND OPTOELECTRONIC DETECTION, SAMPLING, AND CORRELATION-MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].