MBE-GROWN (GAIN)P/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS EXHIBITING CURRENT GAINS UP TO 200

被引：10

作者：

ROCKETT, PI

PATE, MA

CLAXTON, PA

机构：

[1] Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 03期

关键词：

D O I：

10.1109/16.47792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this brief we report lattice-matched Ga 0.5 1In 0.49 P/GaAs heterojunction bipolar transistors grown by solid-source molecular-beam epitaxy; we observe small-signal current gains as high as 200. We believe these results demonstrate the feasibility of using (InGa) P as an alternative to (AlGa) As in GaAs-based devices. © 1990 IEEE

引用

页码：810 / 811

页数：2

共 9 条

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