OMCVD GROWTH OF INP, INGAAS, AND INGAASP ON (110) INP SUBSTRATES

Device quality InP and InGaAsP (lambda(g) = 1.0-1.55 mum) have been grown on 3-degrees off (110) towards (111)B InP substrates. Shallow ledges running along the [110] direction form when the layer thickness is > 1 mum, indicating that a higher degree of misorientation is desirable. InGaAs showed severe facetting, even for thin layers, when grown on (110) substrates misoriented towards (111)B and a granular feature when grown on those misoriented towards (111)A. The InGaAsP layers have room temperature photoluminescence characteristics which are comparable to or better than those grown on (100) substrates. In addition, InGaAsP quantum wells, with compressive and tensile Strain, have room temperature photoluminescence intensities which are 2-5 x higher than those obtained on (100) substrates. In preliminary experiments, a threshold current density of 1.5 kA/cm2 was obtained for a 3 quantum well laser with a cavity length of 1.2 mm.