INFRARED FOCAL PLANES IN INTRINSIC SEMICONDUCTORS

[21] HESS MR, 1974, MAY P IRIS DAYT

[22] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 633 - 635

[23] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3543 - +

[24] LOW-CAPACITANCE PBTE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 210 - 212

[25] HOLLOWAY H, 1976, DAAK0275C0106 CONTR

[26] Joseph A. S., 1973, Electro-Optical Systems Design, V5, P24

[27] INSB CHARGE-INJECTION DEVICE IMAGING ARRAY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 232 - 241

[28] KIMURA H, 1972, J ELEC MATERIALS, V1

[29] LOGOTHETIS EM, 1971, APPL PHYS LETT, V19, P381

[30] LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 202 - &

[21] HESS MR, 1974, MAY P IRIS DAYT

[22] EPITAXIAL PBSE SCHOTTKY-BARRIER DIODES FOR INFRARED DETECTION [J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 633 - 635

[23] EPITAXIAL GROWTH OF LEAD TIN TELLURIDE [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (08) : 3543 - +

[24] LOW-CAPACITANCE PBTE PHOTODIODES [J]. APPLIED PHYSICS LETTERS, 1977, 30 (04) : 210 - 212

[25] HOLLOWAY H, 1976, DAAK0275C0106 CONTR

[26] Joseph A. S., 1973, Electro-Optical Systems Design, V5, P24

[27] INSB CHARGE-INJECTION DEVICE IMAGING ARRAY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (02) : 232 - 241

[28] KIMURA H, 1972, J ELEC MATERIALS, V1

[29] LOGOTHETIS EM, 1971, APPL PHYS LETT, V19, P381

[30] LOW-CARRIER-CONCENTRATION LIQUID EPITAXIAL PB 1-X SNX TE [J]. APPLIED PHYSICS LETTERS, 1971, 19 (06) : 202 - &