EVIDENCE FOR NEGATIVELY CHARGED DX-CENTER IN SI-DOPED ALGAAS FROM PERSISTENT PHOTOCONDUCTIVITY MEASUREMENTS

被引：4

作者：

DIAS, IFL

DEOLIVEIRA, AG

BEZERRA, JC

MIRANDA, RC

GUIMARAES, PSS

SAMPAIO, JF

CHAVES, AS

机构：

[1] Department of Physics, UFMG, 30161 Belo Horizonte, MG

来源：

SOLID STATE COMMUNICATIONS | 1991年 / 77卷 / 05期

关键词：

D O I：

10.1016/0038-1098(91)90743-F

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Persistent photoconductivity experiments were carried out in Si-doped Al(x)Ga(1-x)As at 77 K. The density of persistent free electrons was changed by a factor of 4 to 8. The electron mobilities mu were observed to increase for increasing electron densities n and from the behavior of mu(n) the variation of the ionized scattering impurity densities N(i) with n was evaluated. The densities N(i) show little change as compared to n. It is concluded that negatively charged centers are the only or at the least the dominant deep centers related to silicon impurities in AlGaAs.

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页码：327 / 330

页数：4

相关论文

共 25 条

[1] ELECTRONIC CONDUCTION IN SOLIDS WITH SPHERICALLY SYMMETRIC BAND STRUCTURE [J].

BARRIE, R .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1956, 69 (05) :553-561

[2] DIRECT EVIDENCE OF THE DX CENTER LINK TO THE L-CONDUCTION-BAND MINIMUM IN GAALAS [J].

CALLEJA, E ;

GOMEZ, A ;

MUNOZ, E .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :383-385

[3] EVIDENCE AGAINST THE NEGATIVE-CHARGE-STATE MODEL FOR THE DX CENTER IN N-TYPE GAAS - REPLY [J].

CHADI, DJ ;

CHANG, KJ ;

WALUKIEWICZ, W .

PHYSICAL REVIEW LETTERS, 1989, 62 (16) :1923-1923

[4] ENERGETICS OF DX-CENTER FORMATION IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW B, 1989, 39 (14) :10063-10074

[5] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876

[6] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[7] LARGE-LATTICE-RELAXATION VERSUS SMALL-LATTICE-RELAXATION MODELS OF THE DX CENTERS IN GA1-XALXAS [J].

DMOCHOWSKI, JE ;

LANGER, JM ;

RACZYNSKA, J ;

JANTSCH, W .

PHYSICAL REVIEW B, 1988, 38 (05) :3276-3279

[8] NEW MODEL OF DEEP DONOR CENTRES IN AlxGa1 - xAs. [J].

Henning, J.C.M. ;

Ansems, J.P.M. .

Semiconductor Science and Technology, 1987, 2 (01) :1-13

[9] DEEP DONOR MODEL FOR THE PERSISTENT PHOTOCONDUCTIVITY EFFECT [J].

HJALMARSON, HP ;

DRUMMOND, TJ .

APPLIED PHYSICS LETTERS, 1986, 48 (10) :656-658

[10] A MODEL FOR DX CENTERS - BOND RECONSTRUCTION DUE TO LOCAL RANDOM DONOR-HOST ATOM CONFIGURATIONS IN MIXED SEMICONDUCTOR ALLOYS [J].

KOBAYASHI, KLI ;

UCHIDA, Y ;

NAKASHIMA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12) :L928-L931