CHARACTERIZATION OF SRF2 THIN-FILMS AND OF SRF2/INP STRUCTURES

被引：8

作者：

BARRIERE, AS

CHAOUKI, A

GEVERS, G

GUEGAN, H

SRIBI, C

BERTAULT, D

HAUW, C

ALNOT, P

机构：

[1] UNIV BORDEAUX 1,LCPC,F-33405 TALENCE,FRANCE

[2] THOMSON CSF,LCR,F-91401 ORSAY,FRANCE

[3] CEN BORDEAUX GRADIGAN,F-33170 GRADIGNAN,FRANCE

来源：

THIN SOLID FILMS | 1988年 / 158卷 / 01期

关键词：

D O I：

10.1016/0040-6090(88)90305-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：81 / 91

页数：11

共 11 条

[1] THIN-FILMS OF SOLID-SOLUTIONS OF FLUORIDES FOR EPITAXY ON III-V SEMICONDUCTORS
BARRIERE, AS
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GEVERS, G
GRANNEC, J
RICARD, H
SRIBI, C
[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 688 - 700
[2] Briggs D., 1983, PRACTICAL SURFACE AN, P133
[3] CHU WK, 1980, BACKSCATTERING SPECT
[4] ELECTRICAL-PROPERTIES OF SRF2/INP (100) DIODES AND SRF2 THIN-FILMS
COUTURIER, G
CHAOUKI, A
RICARD, H
BARRIERE, AS
HAW, C
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 870 - 875
[5] DREVILLON B, 1986, VIDE, V41, P255
[6] Seah M. P., 1979, Surface and Interface Analysis, V1, P2, DOI 10.1002/sia.740010103
[7] GROWTH AND CHARACTERIZATION OF EPITAXIAL SRF2 ON INP(100)
SINHAROY, S
HOFFMAN, RA
RIEGER, JH
WARNER, JD
BHASIN, KB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 897 - 899
[8] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES
SULLIVAN, PW
FARROW, RFC
JONES, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 403 - 413
[9] LATTICE-MATCHED SINGLE-CRYSTALLINE DIELECTRIC FILMS (BAXSR1-XF2) ON INP(001) GROWN BY MOLECULAR-BEAM EPITAXY
TU, CW
SHENG, TT
MACRANDER, AT
PHILLIPS, JM
GUGGENHEIM, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 24 - 26
[10] GROWTH OF SINGLE-CRYSTALLINE EPITAXIAL GROUP-II FLUORIDE FILMS ON INP(001) BY MOLECULAR-BEAM EPITAXY
TU, CW
SHENG, TT
READ, MH
SCHLIER, AR
JOHNSON, JG
JOHNSTON, WD
BONNER, WA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2081 - 2087

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