MOS STRUCTURES WITH REVERSE BIASED PN JUNCTION IN APPLYING VOLTAGE OF TRIANGULAR WAVEFORM TO A GATE .1. IMPULSE CURRENT BEHAVIOR

被引：5

作者：

KADEN, G

REIMER, H

机构：

[1] VEB KOMBINAT MIKROELEKTR,WERK FERNSEHELEKTR,BERLIN,GER DEM REP

[2] VEB KOMBINAT MIKROELEKTR,ERFURT,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 53卷 / 01期

关键词：

D O I：

10.1002/pssa.2210530121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：195 / 206

页数：12

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