LPE GROWTH AND CHARACTERIZATION OF NORMAL-TYPE INAS

被引：16

作者：

HARRISON, RJ

HOUSTON, PA

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 78卷 / 02期

关键词：

D O I：

10.1016/0022-0248(86)90061-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：257 / 262

页数：6

共 12 条

[1] PREPARATION OF CRYSTALS OF INAS, INP, GAAS, AND GAP BY A VAPOR PHASE REACTION [J].

ANTELL, GR ;

EFFER, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (06) :509-511

[2] EPITAXIAL INDIUM ARSENIDE LASERS [J].

BROWN, MAC ;

PORTEOUS, P .

SOLID-STATE ELECTRONICS, 1967, 10 (01) :76-&

[3] ELECTRON MOBILITY IN INDIUM ARSENIDE [J].

CHASMAR, RP .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 20 (1-2) :164-166

[4] ELECTRON-MOBILITY IN DEGENERATE TELLURIUM DOPED IN0.53GA0.47AS LPE LAYERS [J].

CLAXTON, PA ;

SHIRAFUJI, J ;

HOUSTON, PA ;

ROBSON, PN .

ELECTRONICS LETTERS, 1982, 18 (05) :213-214

[5] EPITAXIAL INAS ON INAS SUBSTRATES [J].

CRONIN, GR ;

BORRELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (10) :1078-&

[6] EPITAXIAL INAS ON SEMI-INSULATING GAAS SUBSTRATES [J].

CRONIN, GR ;

CONRAD, RW ;

BORELLO, SR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1966, 113 (12) :1336-&

[7]

FISTUL VI, 1969, HEAVILY DOPED SEMICO, P24

[8] ANALYSIS OF POLAR OPTICAL SCATTERING OF ELECTRONS IN GAAS [J].

FORTINI, A ;

DIGUET, D ;

LUGAND, J .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3121-&

[9]

LIU TS, 1952, T ASM, V45, P677

[10] PREPARATION AND PROPERTIES OF EPITAXIAL INAS [J].

MCCARTHY, JP .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :649-&

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