HIGH-TEMPERATURE STABLE IR-AL/N-GAAS SCHOTTKY DIODES

被引：7

作者：

LALINSKY, T ^{[1
]}

GREGUSOVA, D ^{[1
]}

MOZOLOVA, Z ^{[1
]}

BREZA, J ^{[1
]}

VOGRINCIC, P ^{[1
]}

机构：

[1] SLOVAK UNIV TECHNOL BRATISLAVA, DEPT MICROELECTR, CS-81219 BRATISLAVA, SLOVAKIA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 14期

关键词：

D O I：

10.1063/1.111988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the excellent thermal stability of Ir-Al/GaAs Schottky contact based on sequentially evaporated Ir-Al bimetallic system with an aluminum concentration of approximately 25 at. %. The contact system is stable up to 950-degrees-C for 10 s (capless rapid thermal annealing) and exhibits an enhancement of the barrier height with the temperature of annealing.

引用

页码：1818 / 1820

页数：3

共 9 条

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