THERMAL-STABILITY OF COEVAPORATED AL-PT THIN-FILMS ON GAAS SUBSTRATES

被引：11

作者：

BLANPAIN, B ^{[1
]}

WILK, GD ^{[1
]}

OLOWOLAFE, JO ^{[1
]}

MAYER, JW ^{[1
]}

ZHENG, LR ^{[1
]}

机构：

[1] EASTMAN KODAK CO,CORP RES LABS,ROCHESTER,NY 14650

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 04期

关键词：

D O I：

10.1063/1.103671

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the stability of Al-Pt coevaporated thin films on GaAs substrates for aluminum concentrations ranging from 45 to 70 at. %. We show that for the region with compositions between AlPt and Al2Pt these alloy thin films fulfill the thermal stability requirements imposed by GaAs self-aligned gate technology.

引用

收藏

页码：392 / 394

页数：3

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