INVESTIGATION OF THE MELTING TEMPERATURE OF AMORPHOUS-SILICON

被引：25

作者：

KOKOROWSKI, SA

OLSON, GL

ROTH, JA

HESS, LD

机构：

来源：

PHYSICAL REVIEW LETTERS | 1982年 / 48卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.48.498

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：498 / 501

页数：4

共 12 条

[1] TIME-RESOLVED REFLECTIVITY OF ION-IMPLANTED SILICON DURING LASER ANNEALING [J].

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SURKO, CM ;

VENKATESAN, TNC ;

SLUSHER, RE ;

GOLOVCHENKO, JA .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :437-440

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J].

BAERI, P ;

CAMPISANO, SU ;

FOTI, G ;

RIMINI, E .

APPLIED PHYSICS LETTERS, 1978, 33 (02) :137-140

[3] PHASE-TRANSITIONS IN AMORPHOUS SI PRODUCED BY RAPID HEATING [J].

BAERI, P ;

FOTI, G ;

POATE, JM ;

CULLIS, AG .

PHYSICAL REVIEW LETTERS, 1980, 45 (25) :2036-2039

[4]

BAGLEY BG, 1979, AIP C P, V50, P97

[5]

Born M., 1975, PRINCIPLES OPTICS, Vfifth, P628

[6] THERMAL OXIDATION OF SILICON - INSITU MEASUREMENT OF GROWTH-RATE USING ELLIPSOMETRY [J].

HOPPER, MA ;

CLARKE, RA ;

YOUNG, L .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (09) :1216-1222

[7] MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON-BEAM [J].

KNAPP, JA ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :873-875

[8]

KOBOROWSKI SA, 1982, LASER ELECTRON BEAM

[9]

Kokorowski S. A., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P139

[10]

KOKOROWSKI SA, UNPUB

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