EFFECTS OF SPATIALLY INHOMOGENEOUS OXIDE CHARGE DISTRIBUTION ON MOS CAPACITANCE-VOLTAGE CHARACTERISTICS

被引：30

作者：

MCNUTT, MJ

SAH, CT

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3916 / 3921

页数：6

共 19 条

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[8] SILICON-SILICON DIOXIDE SYSTEM [J].

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