GAAS 850-NM MODULATORS SOLDER-BONDED TO SILICON

被引：37

作者：

GOOSSEN, KW

CUNNINGHAM, JE

JAN, WY

机构：

[1] AT & T Bell Laboratories, Holmdel

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 07期

关键词：

D O I：

10.1109/68.229803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present GaAs/AlGaAs p-i-n multiple-quantum-well modulators solder-bonded to a silicon substrate. The GaAs substrate is then chemically removed to allow operation at 850 nm. The gold contact to the modulator is used as the reflector. We achieve a change in reflectivity from 26% to 52% for a 0 to 10 V bias swing. Our device has a modulation saturation intensity of 80 kW/cm 2, demonstrating superb heat-sinking and ohmic contact. We cycled our hybrid from 30-degrees-C to 100-degrees-C over a 100 times, and it showed no degradation, exhibiting the practicality of our technique.

引用

页码：776 / 778

页数：3

共 9 条

[1] GAAS/ALGAAS MULTIPLE QUANTUM WELL OPTICAL MODULATOR USING MULTILAYER REFLECTOR STACK GROWN ON SI SUBSTRATE
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[2] GAAS MULTIPLE QUANTUM-WELL MICRORESONATOR MODULATORS GROWN ON SILICON SUBSTRATES
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[8] FILM-LEVEL HYBRID INTEGRATION OF ALGAAS LASER DIODE WITH GLASS WAVE-GUIDE ON SI SUBSTRATE
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[9] MULTIPLE-QUANTUM-WELL REFLECTION MODULATOR USING A LIFTED-OFF GAAS/ALGAAS FILM BONDED TO GOLD ON SILICON
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[J]. ELECTRONICS LETTERS, 1991, 27 (07) : 557 - 558

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