MODEL OF THE LEAKAGE CURRENT IN N-CHANNEL SILICON-ON-SAPPHIRE MOSTS

[1] CHOUJAA A, 1977, THESIS GRENOBLE

[2] CRISTOLOVEANU S, 1978, SOLID STATE ELECTRON, V21

[3] LOW-FREQUENCY NOISE MEASUREMENTS ON SILICON-ON-SAPPHIRE (SOS) MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (11) : 935 - 940

[4] EFFECTS OF OXIDATION AND HYDROGEN ANNEALING ON SILICON-SAPPHIRE-INTERFACE REGION OF SOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 215 - 218

[5] HAM WE, 1973, IEDM

[6] RADIATION-INDUCED LEAKAGE CURRENTS IN N-CHANNEL SILICON-ON-SAPPHIRE MOSTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1277 - 1284

[7] LORATAMAYO E, 1976, LETIMEA1160 NOT TECH

[8] ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 730 - 738

[9] PREUSS E, 1977, SOLID STATE DEVICES, P7

[10] THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 282 - 288

[1] CHOUJAA A, 1977, THESIS GRENOBLE

[2] CRISTOLOVEANU S, 1978, SOLID STATE ELECTRON, V21

[3] LOW-FREQUENCY NOISE MEASUREMENTS ON SILICON-ON-SAPPHIRE (SOS) MOS-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1977, 20 (11) : 935 - 940

[4] EFFECTS OF OXIDATION AND HYDROGEN ANNEALING ON SILICON-SAPPHIRE-INTERFACE REGION OF SOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) : 215 - 218

[5] HAM WE, 1973, IEDM

[6] RADIATION-INDUCED LEAKAGE CURRENTS IN N-CHANNEL SILICON-ON-SAPPHIRE MOSTS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1277 - 1284

[7] LORATAMAYO E, 1976, LETIMEA1160 NOT TECH

[8] ORIGIN OF LEAKAGE CURRENTS IN SILICON-ON-SAPPHIRE MOS-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (06) : 730 - 738

[9] PREUSS E, 1977, SOLID STATE DEVICES, P7

[10] THEORY OF MOS-TRANSISTOR IN WEAK INVERSION - NEW METHOD TO DETERMINE NUMBER OF SURFACE STATES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (05) : 282 - 288