A PRELIMINARY CONSIDERATION OF THE GROWTH-BEHAVIOR OF CEO2, SRTIO3 AND SRVO3 FILMS ON SI SUBSTRATE

被引：15

作者：

NAGATA, H

机构：

[1] Central Research Laboratory, Sumitomo Cement Co. Ltd., Funabashi-shi, Chiba, 274

来源：

THIN SOLID FILMS | 1993年 / 224卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90448-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

On Si surfaces, CeO2 films grow in a lateral manner but SrTiO3 and SrVO3 films develop in an island-like manner. This difference is considered from the viewpoint of chemical reactions at the interface between the film and Si, and is attributed to differences in free energies for silicate formation. it appears that the CeO2 film grows laterally on a cerium silicate layer because of its preference for Si. In the case of SrTiO3 and SrVO3, competition between the film and silicate growths is considered to be a reason for the island-like growth.

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页码：1 / 3

页数：3

相关论文

共 25 条

[1]

[Anonymous], 1982, OXIDE HDB

[2] REACTIONS AT THE INTERFACES OF THIN-FILMS OF Y-BA-CU-OXIDES AND ZR-OXIDES WITH SI SUBSTRATES [J].

FENNER, DB ;

VIANO, AM ;

FORK, DK ;

CONNELL, GAN ;

BOYCE, JB ;

PONCE, FA ;

TRAMONTANA, JC .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (04) :2176-2182

[3] EPITAXIAL MGO ON SI(001) FOR Y-BA-CU-O THIN-FILM GROWTH BY PULSED LASER DEPOSITION [J].

FORK, DK ;

PONCE, FA ;

TRAMONTANA, JC ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1991, 58 (20) :2294-2296

[4] EPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON HYDROGEN-TERMINATED SI BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

CONNELL, GAN ;

PHILLIPS, JM ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1990, 57 (11) :1137-1139

[5] GROWTH OF EPITAXIAL PRO2 THIN-FILMS ON HYDROGEN TERMINATED SI (111) BY PULSED LASER DEPOSITION [J].

FORK, DK ;

FENNER, DB ;

GEBALLE, TH .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (08) :4316-4318

[6] HIGH CRITICAL CURRENT DENSITIES IN EPITAXIAL YBA2CU3O7-DELTA THIN-FILMS ON SILICON-ON-SAPPHIRE [J].

FORK, DK ;

PONCE, FA ;

TRAMONTANA, JC ;

NEWMAN, N ;

PHILLIPS, JM ;

GEBALLE, TH .

APPLIED PHYSICS LETTERS, 1991, 58 (21) :2432-2434

[7]

FUEKI K, 1985, DENKIKAGAKU BINRAN, pCH2

[8] HETEROEPITAXIAL GROWTH OF Y2O3 FILMS ON SILICON [J].

FUKUMOTO, H ;

IMURA, T ;

OSAKA, Y .

APPLIED PHYSICS LETTERS, 1989, 55 (04) :360-361

[9] STRAIN-MEASUREMENTS IN HETEROEPITAXIAL YTTRIA-STABILIZED ZIRCONIA ON SI BY ION-BEAM CHANNELING [J].

FUKUMOTO, H ;

YAMAMOTO, M ;

OSAKA, Y ;

NISHIYAMA, F .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2447-2449

[10] GROWTH OF BUFFER LAYERS ON SI SUBSTRATE FOR HIGH-TC SUPERCONDUCTING THIN-FILMS [J].

HARADA, K ;

NAKANISHI, H ;

ITOZAKI, H ;

YAZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (05) :934-938