INVESTIGATION OF THE INTERFACE REGION PRODUCED BY MOLECULAR-BEAM EPITAXIAL REGROWTH

被引：24

作者：

BISWAS, D ^{[1
]}

BERGER, PR ^{[1
]}

DAS, U ^{[1
]}

OH, JE ^{[1
]}

BHATTACHARYA, PK ^{[1
]}

机构：

[1] UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1989年 / 18卷 / 02期

关键词：

D O I：

10.1007/BF02657399

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：137 / 142

页数：6

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