OPTICAL MEASUREMENT OF THE DISTRIBUTION OF DAMAGE IN ION-IMPLANTED GAAS

被引：8

作者：

KRAISINGDECHA, P ^{[1
]}

SHWE, C ^{[1
]}

GAL, M ^{[1
]}

TAN, HH ^{[1
]}

JAGADISH, C ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,RES SCH PHYS SCI & ENGN,DEPT ELECTR MAT ENG,CANBERRA,ACT 0200,AUSTRALIA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 08期

关键词：

D O I：

10.1088/0268-1242/9/8/008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The distribution of damage in Si-implanted GaAs has been studied using differential reflectance (DR) spectroscopy. This novel and relatively simple optical technique has high sensitivity and allows the study of damage distribution in a dose range of 1 x 10(11)-3 X 10(14) cm-2, which is difficult to access by other techniques. The effects of substrate temperature (30-300-degrees-C) and crystal orientation ((100), (110) and (111) directions) on the damage profiles have also been measured. As expected, the overall damage was found to increase with increasing ion dose and to decrease with increasing temperature. The measured damage profiles, obtained by successively etching the sample and measuring the DR Signal, have been compared with TRIM simulations. The magnitude and shape of the damage profiles were found to be very sensitive to crystal orientation.

引用

页码：1489 / 1492

页数：4

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